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IRS20955(S)PbF
R2
D1
UV
DETECT
CSH
R1
+B
VB
HIGH
SIDE
CS
UV
Q
HO
R3
Cbs
Dbs
Q1
OUT
HV
LEVEL
FLOATING HIGH SIDE
HV
LEVEL
VS
SHIFT
5V REG
SHIFT
VCC
Vcc
UV
DETECT
DEAD TIME
SD
LOW SIDE CS
LO
COM
OCSET
R5
Q2
-B
R4
VREF
Figure 12. Bi-Directional Over-Current Protection
Low-side Over-Current Sensing
For negative load currents, low-side over-current
sensing monitors the load condition and shuts down
switching operation if the load current exceeds the
preset trip level.
Low-side current sensing is based on the
measurement of V DS across the low side MOFET
during low-side turn on. In order to avoid triggering
OCP from overshoot, a blanking interval inserted
after LO turn on disables over-current detection for
450 ns.
The OCSET pin is used to program the threshold for
low-side over-current sensing. When the V DS
measured across the low-side MOSFET exceeds
the voltage at the OCSET pin with respect COM, the
IRS20955S begins the OCP sequence described
earlier.
www.irf.com
Since the voltage from V S to COM is compared to
the voltage at the OCSET pin, the voltage at OCSET
determines the trip level for over-current detection.
By selecting the trip level for over-current, the
voltage at OCSET can be calculated using the
equation below.
V OCSET = V DS(LOW SIDE) = I TRIP+ x R DS(ON)
In order to minimize the effect of the input bias
current at the OCSET pin, select resistor values for
R4 and R5 such that the current through the voltage
divider is 0.5 mA or more.
* Note: Using V REF to generate an input to OCSET
through a resistive divider provides improved
immunity from fluctuations in V CC .
12
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